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The proton-induced degradation for InP/InGaAs heterojunction bipolar transistors (HBTs) is studied based on the calculation in the energy range from the displacement damage threshold to 100 MeV with analytical model of nonionizing energy loss (NIEL). The experiments of 3 and 10 MeV proton radiation on InP/InGaAs HBTs have been performed, in which significant current gain degradation is predominant...
Very long wave (> 14μm) infrared quantum cascade detectors based on III-V materials are presented. Thanks to the optimum design of electron transport mechanism, high detectivity is obtained without decreasing device responsivity. For the 14.2 μm QCD, a work temperature up to 82K is obtained with a peak responsivity about 0.95 mA/W and detectivity of 1×108 Jones. Peak responsivities is 2.34 mA/W...
We have investigated InAs quantum dots (QDs) on strained GaAsSb barrier layer in different Sb compositions. Use of Sb incorporated barrier layer for QD growth gives better quantum dot properties such as density, lateral size and uniformity. Growing GaAs0.89Sb0.11 results in a doubling of QD density and a 50% decrease in size of the QDs compared to growth on GaAs. Also, size distribution of QDs became...
The InAs/GaAsSb quantum dot/barrier material system has been identified as a candidate for implementing the quantum dot (QD) solar cell for an Sb content of ∼ 12%. We present results from the growth of this system on GaAs substrates by Molecular Beam Epitaxy (MBE). The results show that the growth of GaAsSb requires special care in order to ensure the highest quality interface and also to maintain...
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